CSB1370 - Continental Device

CSB1370 PNP Silicon Epitaxial Power Transistor

SYMBOL VCBO Collector -Base Voltage VCEO Collector -Emitter Voltage VEBO Emitter- Base Voltage IC Collector Current ICP Peak PC Power Dissipation @ Ta=25 deg C Power Dissipation @ Tc=25 deg C Tj Junction Temperature Tstg Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Specified) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA, IB=0 Col.

Features

DC Current Gain Dynamic Characteristics ft VCE=5V,IC=0.5A, Transition Frequency f=5MHz Cob VCB=10V, IE=0 Collector Output Capacitance f=1MHz hFE CLASSIFICATION:MARKING : D : 60 -120; CSB 1370 D E : 100 -200 CSB 1370 E VALUE 60 60 5.0 3.0 6.0 2.0 30 150 -55 to +150 MIN 60 60 5.0 60 TYP 15 80 MAX 10 10 1.5 1.5 320 UNIT V V V A A W W deg C deg C UNIT V V V uA uA V V MHz pF F : 160 -320 CSB 1370 F Continental Device India Limited Data Sheet Page 1 of 3 TO-220 Plastic Package C E D IM A B C D E F G H J K L M N O M IN . M AX . B H F N L O 1 2 3 D J G M All diminsions in mm. 14.42 1.