RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Min Min PD (W) IC (A) ICES @ VCE hFE hFE @ IC (uA) (A) Max .
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CSB1370 |
Continental Device |
PNP Silicon Epitaxial Power Transistor | |
2 | CSB10100CT-A |
CITC |
Super Low Barrier High Voltage Power Rectifier | |
3 | CSB1058 |
CDIL |
PNP EPITAXIAL PLANAR SILICON TRANSISTOR | |
4 | CSB11 |
Connor-Winfield |
TCXO | |
5 | CSB12 |
Connor-Winfield |
TCXO | |
6 | CSB16C04 |
Chino-Excel Technology |
16 AMPS. SCHOTTKY BARRIER RECTIFIERS | |
7 | CSB20C04 |
Chino-Excel Technology |
20 AMPS. SCHOTTKY BARRIER RECTIFIERS | |
8 | CSB20S45CT-A |
CITC |
Super Low Barrier High Voltage Power Rectifier | |
9 | CSB21 |
Connor-Winfield |
TCXO | |
10 | CSB22 |
Connor-Winfield |
TCXO | |
11 | CSB400 |
ETC |
CERAMIC RESONATOR | |
12 | CSB400P |
Murata |
CERAMIC RESONATOR |