CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 5 75 1.25 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficien.
l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.5nC) l Low Reverse transfer capacitances(Typical:7.5pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pul.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS830A3RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS830A8RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS830 |
ETC |
VDMOS Transistors | |
4 | CS830 |
LZG |
N-Channel MOSFET | |
5 | CS8305E |
Chipstar Micro-electronics |
5.0W mono / ultra-low EMI / filterless Class-D audio amplifier | |
6 | CS830F |
LZG |
N-CHANNEL MOSFET | |
7 | CS830FA9RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
8 | CS8312 |
ON Semiconductor |
IGBT | |
9 | CS8312 |
Cherry Semiconductor Corporation |
IGBT Ignition Predriver | |
10 | CS8321 |
Cherry Semiconductor Corporation |
Micropower 5V/ 150mA Low Dropout Linear Regulator | |
11 | CS8321 |
ON Semiconductor |
Low Dropout Linear Regulator | |
12 | CS8326S |
Chipstar |
CS8326S |