IRF830(CS830) : DC/DC 。 N-Channel MOSFET/N MOS Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,,。 Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS IAR EAS EAR PD(Tc=25℃) TJ,TSTG 500 .
Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VDSS ID(Tc=25℃) ID(Tc=100℃) IDM VGSS IAR EAS EAR PD(Tc=25℃) TJ,TSTG 500 5.0 3.0 20 ±30 5 292 8.75 87.5 -55 to 150 V A A A V A mJ mJ W ℃ /Electrical Characteristics(Ta=25℃) Symbol Test Conditions BVDSS VGS=0V ID=250μA VDS=500V VGS=0V IDSS VDS=400V TC=125℃ IGSS VGS=±30V VDS=0V VGS(th) VDS=VGS ID=250μA RDS(on) gFS VSD Ciss Coss Crss td(on) tr td(off) tf VGS=10V VDS=40V VGS=0V ID=2.5A ID=2.5A IS=5.0A Min 500 Typ Max 10 100 ±0.1 Unit V μA μA μA V Ω S V pF 2.0 1.15 4.2 680 85 15 20 40 .
CS830 CS830 VDMOS 1. CS830 VDMOS ,。 : ● ● ● ● :TO-220AB 10.7max 4.8max 1.4max φ3.84 6.9max 2. 2.1 ,Tamb= .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS8305E |
Chipstar Micro-electronics |
5.0W mono / ultra-low EMI / filterless Class-D audio amplifier | |
2 | CS830A3RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS830A4RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS830A8RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
5 | CS830F |
LZG |
N-CHANNEL MOSFET | |
6 | CS830FA9RD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS8312 |
ON Semiconductor |
IGBT | |
8 | CS8312 |
Cherry Semiconductor Corporation |
IGBT Ignition Predriver | |
9 | CS8321 |
Cherry Semiconductor Corporation |
Micropower 5V/ 150mA Low Dropout Linear Regulator | |
10 | CS8321 |
ON Semiconductor |
Low Dropout Linear Regulator | |
11 | CS8326S |
Chipstar |
CS8326S | |
12 | CS8330C |
ChipSourceTek |
Class R Audio Amplifier |