CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance VDSS ID PD(TC=25℃) RDS(ON)Typ 200 9 83 0.23 the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficienc.
l Fast Switching l Low ON Resistance(Rdson≤0.28Ω) l Low Gate Charge (Typical Data:13nC) l Low Reverse transfer capacitances(Typical:10pF) l 100% Single Pulse avalanche energy Test Applications: Automotive、DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS630A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS630A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS630 |
IXYS Corporation |
Phase Control Thyristor | |
4 | CS630D |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
5 | CS630F |
ETC |
VDMOS transistor | |
6 | CS630FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS634F |
LZG |
N-Channel MOSFET | |
8 | CS6-04 |
ETC |
(CS6-xx) Thyristor | |
9 | CS6-06 |
ETC |
(CS6-xx) Thyristor | |
10 | CS6-07 |
ETC |
(CS6-xx) Thyristor | |
11 | CS6-08 |
ETC |
(CS6-xx) Thyristor | |
12 | CS60 |
IXYS Corporation |
Phase Control Thyristor |