Phase Control Thyristor V CS 630 ITRMS = 1400 A ITAVM = 630 A VRRM = 1200 - 1600 VRSM VDSM V 1200 1400 1600 V RRM V DRM V Type 1 2 2 4 3 3 4 1200 1400 1600 CS 630-12io1 CS 630-14io1 CS 630-16io1 1 Symbol ITRMS ITAVM I TSM Test Conditions TC = 85° C; 180° sine TVJ = 45° C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t =.
q q q ∫i2dt TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 q q Thyristor for line frequency International standard package Long-term stability of blocking voltages Gate and auxiliary cathode pin connection Amplifying gate (di/dt)cr TVJ = TVJM repetitive, IT = 2500 A f = 5 Hz, tP =200 ms VD = 0.67 VDRM IG = 2 A diG/dt = 2 A/µ s TVJ = TVJM; VDR = 2/3 VDRM RGK = ∞; method 1 (linear voltage rise) TVJ = TVJM IT = ITAVM tP = 30 µ s tP = 500 µ s tP = 10 ms (dv/dt)cr P GM 1000 120 60 16 10 -40...+125 125 -40...+ 50 16.0 .. 19.0 210 V/ µs W W W V °C °C °C kN g q q DC Motor control Power converter AC p.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS630A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS630A4H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS630A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS630D |
BLUE ROCKET ELECTRONICS |
N-CHANNEL MOSFET | |
5 | CS630F |
ETC |
VDMOS transistor | |
6 | CS630FA9H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS634F |
LZG |
N-Channel MOSFET | |
8 | CS6-04 |
ETC |
(CS6-xx) Thyristor | |
9 | CS6-06 |
ETC |
(CS6-xx) Thyristor | |
10 | CS6-07 |
ETC |
(CS6-xx) Thyristor | |
11 | CS6-08 |
ETC |
(CS6-xx) Thyristor | |
12 | CS60 |
IXYS Corporation |
Phase Control Thyristor |