CS220N04 A8H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve VDSS ID PD(TC=25℃) RDS(ON)Typ 40 220 333 3.2 switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effic.
l Trench FET Power MOSFET l Low ON Resistance(Rdson≤4mΩ) l Low Gate Charge (Typical Data:138nC) l Low Reverse transfer capacitances(Typical:800pF) l 100% Single Pulse avalanche energy Test Applications: UPS,DC Motor Control and Class D Amplifier. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter Rating VDSS ID I D a1 M VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS220-12B |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
2 | CS220-12D |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
3 | CS220-12M |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
4 | CS220-12N |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
5 | CS220-12P |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
6 | CS220-8B |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
7 | CS220-8D |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
8 | CS220-8M |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
9 | CS220-8N |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
10 | CS22-08io1M |
IXYS |
High Efficiency Thyristor | |
11 | CS22-12io1M |
IXYS |
High Efficiency Thyristor | |
12 | CS22-12IO1M |
INCHANGE |
Thyristors |