The CENTRAL SEMICONDUCTOR CS220-8B series types are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Peak Repetitive Off-State Voltage VDRM, VRRM RMS On-State Current (TC=90°C) IT(RMS) Peak One Cycle Surge Current, t=10ms IT.
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IDRM, IRRM Rated VDRM, VRRM IDRM, IRRM Rated VDRM, VRRM, TC=125°C IGT VD=12V, RL=10Ω 3.0 IH IT=100mA 7.3 VGT VD=12V, RL=10Ω 0.9 VTM ITM=16A, tp=380μs 1.3 dv/dt VD=⅔Rated VDRM, TC=125°C 200 MAX 10 2.0 15 20 1.5 1.8 UNITS V A A A2s W W A V V A/μs °C °C °C/W °C/W UNITS μA mA mA mA V V V/μs R4 (24-October 2013) CS220-8B CS220-8D CS220-8M CS220-8N SILICON CONTROLLED RECTIFIERS 8.0 AMP, 200 THRU 800 VOLT TO-220 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate Tab is comm.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS220-8B |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
2 | CS220-8M |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
3 | CS220-8N |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
4 | CS220-12B |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
5 | CS220-12D |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
6 | CS220-12M |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
7 | CS220-12N |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
8 | CS220-12P |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
9 | CS220N04A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS22-08io1M |
IXYS |
High Efficiency Thyristor | |
11 | CS22-12io1M |
IXYS |
High Efficiency Thyristor | |
12 | CS22-12IO1M |
INCHANGE |
Thyristors |