The CENTRAL SEMICONDUCTOR CS220-12B series type is an Epoxy Molded Silicon Controlled Rectifier designed for sensing circuit applications and control systems. MAXIMUM RATINGS (TC = 25 C unless otherwise noted) CS220 -12B 200 CS220 -12D 400 CS220 -12M 600 12 120 72 40 1.0 4.0 16 5.0 100 -40 to +150 -40 to +125 60 2.5 o o o SYMBOL Peak Repetitive Off-State Vo.
S220 -12P 1000 UNITS VDRM, VRRM IT(RMS) ITSM I2t PGM PG(AV) IFGM VFGM VRGM di/dt Tstg TJ ΘJ-A ΘJ-C V A A A2 s W W A V V A/µs o o C C C/W C/W ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) SYMBOL IDRM, IRRM IDRM, IRRM IGT IH VGT VTM dv/dt TEST CONDITIONS Rated VDRM, VRRM o Rated VDRM, VRRM, TC = 125 C VD = 12V, RL = 33Ω IT = 100mA VD = 12V, RL = 33Ω ITM = 24A, tp = 10ms VD = .67 x VDRM, TC = 125 C o o MIN TYP MAX 0.01 3.00 15 30 1.50 1.60 UNITS mA mA mA mA V V V/µs 200 R2 ( 30-November 2001) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS220-12B |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
2 | CS220-12D |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
3 | CS220-12M |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
4 | CS220-12N |
Central Semiconductor Corp |
SILICON CONTROLLED RECTIFIER 12 AMP/ 200 THRU 1000 VOLTS | |
5 | CS220-8B |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
6 | CS220-8D |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
7 | CS220-8M |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
8 | CS220-8N |
Central Semiconductor |
SILICON CONTROLLED RECTIFIERS | |
9 | CS220N04A8H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS22-08io1M |
IXYS |
High Efficiency Thyristor | |
11 | CS22-12io1M |
IXYS |
High Efficiency Thyristor | |
12 | CS22-12IO1M |
INCHANGE |
Thyristors |