CS1N65B1 - Huajing Microelectronics

CS1N65B1 Silicon N-Channel Power MOSFET

CS1N65 B1, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-92, which accord.

Features

l Fast Switching l Low ON Resistance(Rdson≤9.5Ω) l Low Gate Charge (Typical Data:5.3nC) l Low Reverse transfer capacitances(Typical:2pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalan.