CS1N60C1H - Huajing Microelectronics

CS1N60C1H Silicon N-Channel Power MOSFET

CS1N60 C1H-BD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 600 1.0 3 9 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher effici.

Features

l Fast Switching l Low ON Resistance(Rdson≤10.5Ω) l Low Gate Charge (Typical Data:6.0nC) l Low Reverse transfer capacitances(Typical:4pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter Rating VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulse.