VDSS 650 V CS1N65 A1, the silicon N-channel Enhanced ID 0.8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 W which reduce the conduction loss, improve switching RDS(ON)Typ 13.8 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and .
l Fast Switching l Low ON Resistance(Rdson≤16Ω) l Low Gate Charge (Typical Data:3.6nC) l Low Reverse transfer capacitances(Typical:1pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CS1N65A3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
2 | CS1N65B1 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
3 | CS1N65B3 |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
4 | CS1N60 |
EDN |
VDMOS | |
5 | CS1N60A1H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
6 | CS1N60A3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
7 | CS1N60B1R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
8 | CS1N60B3R |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
9 | CS1N60C1H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
10 | CS1N60C1HD |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
11 | CS1N60C3H |
Huajing Microelectronics |
Silicon N-Channel Power MOSFET | |
12 | CS1N60F |
Huajing Microelectronics |
VDMOS |