CPH3456 Power MOSFET 20V, 71mΩ, 3.5A, Single N-Channel www.onsemi.com Features • ON-Resistance RDS(on)1=54mΩ (typ) • 1.8V Drive • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.
• ON-Resistance RDS(on)1=54mΩ (typ)
• 1.8V Drive
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
20 V
Gate to Source Voltage
VGSS
±12 V
Drain Current (DC)
ID 3.5 A
Drain Current (Pulse) PW≤10μs, duty cycle≤1%
IDP 14 A
Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm)
Junction Temperature
PD Tj
1.0 W 150 °C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity < 200V
*”, so please take care when handling.
* Machine Model
T.
www.DataSheet.co.kr Ordering number : ENA1803 CPH3456 SANYO Semiconductors DATA SHEET CPH3456 Features • • • N-Cha.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH3453 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
2 | CPH3455 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
3 | CPH3455 |
ON Semiconductor |
Power MOSFET | |
4 | CPH3457 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
5 | CPH3457 |
ON Semiconductor |
N-Channel Power MOSFET | |
6 | CPH3459 |
ON Semiconductor |
Power MOSFET | |
7 | CPH3403 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
8 | CPH3405 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
9 | CPH3406 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
10 | CPH3407 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
11 | CPH3408 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
12 | CPH3409 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |