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CPH3456 - ON Semiconductor

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CPH3456 Power MOSFET

CPH3456 Power MOSFET 20V, 71mΩ, 3.5A, Single N-Channel www.onsemi.com Features • ON-Resistance RDS(on)1=54mΩ (typ) • 1.8V Drive • Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.

Features


• ON-Resistance RDS(on)1=54mΩ (typ)
• 1.8V Drive
• Pb-Free, Halogen Free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID 3.5 A Drain Current (Pulse) PW≤10μs, duty cycle≤1% IDP 14 A Power Dissipation When mounted on ceramic substrate (900mm2×0.8mm) Junction Temperature PD Tj 1.0 W 150 °C Storage Temperature Tstg −55 to +150 °C This product is designed to “ESD immunity < 200V
*”, so please take care when handling.
* Machine Model T.

The same part from a different manufacturer

Datasheet CPH3456 - Sanyo Semicon Device CPH3456

www.DataSheet.co.kr Ordering number : ENA1803 CPH3456 SANYO Semiconductors DATA SHEET CPH3456 Features • • • N-Cha.

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