Ordering number : ENN7123 CPH3409 N-Channel Silicon MOSFET CPH3409 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3409] 2.9 0.4 3 0.6 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 0.05 1.6 2.8 1 1.9 2 0.6 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximu.
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Package Dimensions
unit : mm 2152A
[CPH3409]
2.9 0.4 3 0.6 0.15
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
0.05 1.6 2.8
1 1.9
2
0.6
0.7 0.9
1 : Gate 2 : Source 3 : Drain SANYO : CPH3
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions
0.2
Ratings 30 ±10 5 20 1.2 150 --55 to +150
0.2
Unit .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CPH3403 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
2 | CPH3405 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
3 | CPH3406 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
4 | CPH3407 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
5 | CPH3408 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
6 | CPH3410 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
7 | CPH3413 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
8 | CPH3414 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
9 | CPH3417 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
10 | CPH3418 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
11 | CPH3422 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
12 | CPH3424 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications |