CPH3455 - ON Semiconductor

CPH3455 Power MOSFET

CPH3455 Power MOSFET 35V, 104mΩ, 3A, Single N-Channel This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • Low On-Resistance • 4V drive • Pb-Fr.

Features

• Low On-Resistance
• 4V drive
• Pb-Free, Halogen Free and RoHS compliance Typical Applications
• Load Switch
• Motor Drive SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1, 2) Parameter Symbol Value Unit Drain to Source Voltage VDSS 35 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 3 A Drain Current (Pulse) PW ≤ 10μs, duty cycle ≤ 1% IDP 12 A Power Dissipation When mounted on ceramic substrate (900mm2 × 0.8mm) PD 1W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Note 1 : Stresses exceeding those listed in the Maximum Rat.