CMPDM8120 - Central Semiconductor

CMPDM8120 SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMPDM8120 is an Enhancement-mode P-Channel Field Effect Transistor, manufactured by the P-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers low rDS(ON) and low threshold voltage. MARKING CODE: C8120 SOT-23 CASE APPLICATIONS: • Load/Power switches • Power supply converter cir.

Features

• Low rDS(ON)
• Low threshold voltage
• Logic level compatibility
• Small SOT-23 package SYMBOL VDS VGS ID ID IS IDM ISM PD TJ, Tstg ΘJA 20 8.0 860 950 360 4.0 4.0 350 -65 to +150 357 MAX 50 500 1.0 0.9 150 142 200 240 UNITS V V mA mA mA A A mW °C °C/W UNITS nA nA V V V mΩ mΩ mΩ mΩ S pF pF pF ns ns ELECTRICAL CHARACTERISTICS: (TA=25°C unless SYMBOL TEST CONDITIONS IGSSF, IGSSR VGS=8.0V, VDS=0 IDSS VDS=20V, VGS=0 BVDSS VGS=0, ID=250μA VGS(th) VDS=VGS, ID=250μA VSD VGS=0, IS=360mA rDS(ON) VGS=4.5V, ID=0.95A rDS(ON) VGS=4.5V, ID=0.77A rDS(ON) VGS=2.5V, ID=0.67A rDS(ON) VGS=1.8V, ID=0.2A gFS VDS.