TM Semiconductor Corp. The CENTRAL SEMICONDUCTOR CMPD1001 series types are silicon switching diodes manufactured by the epitaxial planar process, designed for applications requiring high current capability. SOT-23 CASE The following configurations are available: CMPD1001 CMPD1001S CMPD1001A SINGLE DUAL, IN SERIES DUAL, COMMON ANODE MARKING CODE: L20 MARK.
VR=90V, TA=150oC IF=10mA MIN 90 MAX 100 100 0.75 UNIT V nA µA V 130 SYMBOL VF VF VF VF CT trr TEST CONDITIONS MIN IF=50mA IF=100mA IF=200mA IF=400mA VR=0, f=1 MHz IF=IR=30mA, RECOV. TO 3.0mA, RL=100Ω MAX 0.84 0.90 1.00 1.25 35 50 UNIT V V V V pF ns All dimensions in inches (mm). NO CONNECTION A C1 A2 C1 C2 C CMPD1001 A1, C2 CMPD1001S A1, A2 CMPD1001A R2 131 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CMPD1001 |
Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE | |
2 | CMPD1001S |
Central Semiconductor Corp |
HIGH CURRENT SWITCHING DIODE | |
3 | CMPD2003 |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE | |
4 | CMPD2003A |
Central Semiconductor |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE | |
5 | CMPD2003C |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE | |
6 | CMPD2003S |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE | |
7 | CMPD2004 |
Central Semiconductor Corp |
HIGH VOLTAGE SWITCHING DIODE | |
8 | CMPD2004A |
Central Semiconductor |
SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE | |
9 | CMPD2004C |
Central Semiconductor Corp |
SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE | |
10 | CMPD2004S |
Central Semiconductor Corp |
HIGH VOLTAGE SWITCHING DIODE | |
11 | CMPD2836 |
Central Semiconductor Corp |
SURFACE MOUNT DUAL/ SILICON SWITCHING DIODES | |
12 | CMPD2836E |
Central Semiconductor |
ENHANCED SPECIFICATION SURFACE MOUNT DUAL SILICON SWITCHING DIODES |