CMPDM202PH - Central Semiconductor

CMPDM202PH SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET

The CENTRAL SEMICONDUCTOR CMPDM202PH is a High Current P-Channel Enhancement-mode Silicon MOSFET, manufactured by the P-Channel DMOS Process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers High Current, Low rDS(ON), Low Threshold Voltage, and Low Leakage Current. MARKING CODE: 202C SOT-23F CASE APPLICATIONS: • L.

Features

• Low rDS(ON) (0.093Ω MAX @ VGS=2.5V)
• High current (ID=2.3A)
• Logic level compatibility SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 20 12 2.3 9.2 350 -55 to +150 357 UNITS V V A A mW °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=12V, VDS=0 IDSS BVDSS VGS(th) rDS(ON) rDS(ON) gFS Crss Ciss Coss Qg(tot) Qgs Qgd ton toff VDS=20V, VGS=0 VGS=0, ID=250μA VGS=VDS, ID=250μA VGS=5.0V, ID=1.2A VGS=2.5V, ID=1.2A VDS=5.0V, ID=2.3A VDD=10V, VGS=0, f=1.0MHz VDD=10V, VGS=0, f=1.0MHz VDD=10V, VDD=10V, VDD=10V, VGS=0, f=1.0MHz VGS=5.0V, ID=2..