Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and therma.
□ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DY-12H is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.150± 0..
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bri.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM200DY-12NF |
Mitsubishi Electric Semiconductor |
IGBT Module | |
2 | CM200DY-13T |
Mitsubishi |
IGBT Modules | |
3 | CM200DY-24A |
Mitsubishi Electric Semiconductor |
IGBT Module | |
4 | CM200DY-24H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
5 | CM200DY-24H |
Powerex Power Semiconductors |
Dual IGBT Module | |
6 | CM200DY-24NF |
Mitsubishi Electric Semiconductor |
IGBT Module | |
7 | CM200DY-28H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
8 | CM200DY-28H |
Powerex Power Semiconductors |
Dual IGBT Module | |
9 | CM200DY-34A |
Mitsubishi Electric |
IGBT Module | |
10 | CM200DY-34T |
Mitsubishi |
IGBT MODULES | |
11 | CM200DC-24NFM |
Powerex |
Dual IGBT | |
12 | CM200DU-12F |
Powerex Power Semiconductors |
IGBT Module |