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CM200DY-12H - Powerex Power Semiconductors

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CM200DY-12H Dual IGBT Module

Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and therma.

Features

□ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery (70ns) Free-Wheel Diode □ High Frequency Operation (20-25kHz) □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ Motion/Servo Control □ UPS □ Welding Power Supplies □ Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM200DY-12H is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.150± 0..

The same part from a different manufacturer

Datasheet CM200DY-12H - Mitsubishi Electric Semiconductor CM200DY-12H

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bri.

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