Powerex IGBTMOD™ Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and therma.
□ Low Drive Power □ Low VCE(sat) □ Discrete Super-Fast Recovery Free-Wheel Diode □ Isolated Baseplate for Easy Heat Sinking Applications: □ AC Motor Control □ UPS □ Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM200DU-12F is a 600V (VCES), 200 Ampere Dual IGBTMOD™ Power Module. Type CM Current Rating Amperes 200 VCES Volts (x 50) 12 C2E1 E2 C1 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.70 1.89 3.15± 0.01 0.43 0.16 0.71 0.02 Millimeters 94.0 48.0 80.0± 0.25 11.0 4.0 18.0 0.5.
CM200DU-12F MITSUBISHI IGBT MODULES CM200DU-12F HIGH POWER SWITCHING USE ¡IC .............
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CM200DU-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
2 | CM200DU-12H |
Powerex Power Semiconductors |
Dual IGBT Module | |
3 | CM200DU-24F |
Mitsubishi Electric Semiconductor |
IGBT Module | |
4 | CM200DU-24F |
Powerex Power Semiconductors |
IGBT Module | |
5 | CM200DU-24H |
Mitsubishi Electric Semiconductor |
IGBT MODULES | |
6 | CM200DU-24H |
Powerex Power Semiconductors |
Dual IGBT Module | |
7 | CM200DU-34KA |
Powerex Power Semiconductors |
Dual IGBT Module | |
8 | CM200DU-34KA |
Mitsubishi Electric |
IGBT Module | |
9 | CM200DC-24NFM |
Powerex |
Dual IGBT | |
10 | CM200DX-24S |
Mitsubishi |
IGBT Modules | |
11 | CM200DY-12H |
Mitsubishi Electric Semiconductor |
IGBT Module | |
12 | CM200DY-12H |
Powerex Power Semiconductors |
Dual IGBT Module |