CM200DY-12NF - Mitsubishi Electric Semiconductor

CM200DY-12NF IGBT Module

MITSUBISHI IGBT MODULES CM200DY-12NF HIGH POWER SWITCHING USE CM200DY-12NF ¡IC ....... 200A ¡VCES 600V ¡Insulated Type ¡2-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM.

Features

ltage Torque strength Weight G-E Short C-E Short DC, TC’ = 93°C
*3 Pulse Pulse TC = 25°C Conditions Ratings 600 ±20 200 400 200 400 650
  –40 ~ +150
  –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W °C °C V N
•m N
•m g (Note 2) (Note 2) Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Parameter Collector cutoff current Gate-emitter threshold voltage Gate leak.