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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate MOSFETS CJD4410 N-Channel 30-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch z Battery Switch TO-2 51-3L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS .
VDS =30V, VGS =0V Drain-source on-state resistance (note 3) RDS(on) VGS =10V, ID =10A VGS =4.5V, ID =5A Forward transconductance (note 3) gfs VDS =15V, ID =5A Body diode voltage (note 3) VSD IS=2.3A, VGS =0 Dynamic (note 4) Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) tf VDD=25V, RL=25Ω, ID =1A, VGEN=10V,RG=6Ω Gate Resistance Rg f =1MHz Notes : 1. This test is performed with no heat sink at Ta=25℃. 2. This test is performed with inifite heat sink at Tc=25℃. 3. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%. 4. Guaranteed by design, not subje.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CJD4435 |
JCET |
P-Channel MOSFET |
|
| 2 | CJD44H11 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON |
|
| 3 | CJD45H11 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON |
|
| 4 | CJD47 |
Central Semiconductor Corp |
NPN SILICON POWER TRANSISTOR |
|
| 5 | CJD01N60 |
ZPSEMI |
N-Channel Power MOSFET |
|
| 6 | CJD01N60 |
JCET |
N-Channel Power MOSFET |
|
| 7 | CJD01N65B |
ZPSEMI |
N-Channel Power MOSFET |
|
| 8 | CJD01N80 |
ZPSEMI |
N-Channel Power MOSFET |
|
| 9 | CJD02N60 |
JCET |
N-Channel MOSFET |
|
| 10 | CJD02N60 |
ZPSEMI |
N-Channel Power MOSFET |
|
| 11 | CJD02N65 |
JCET |
N-Channel MOSFET |
|
| 12 | CJD02N65 |
ZPSEMI |
N-Channel Power MOSFET |
|