The CENTRAL SEMICONDUCTOR CJD47 and CJD50 are silicon NPN power transistors manufactured in a surface mount package, and designed for high voltage applications such as power supplies and other switching applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitte.
0V (CJD47) ICES VCE=500V (CJD50) IEBO VEB=5.0V BVCEO IC=30mA (CJD47) 250 BVCEO IC=30mA (CJD50) 400 VCE(SAT) IC=1.0A, IB=200mA VBE(ON) VCE=10V, IC=1.0A hFE VCE=10V, IC=300mA 30 hFE VCE=10V, IC=1.0A 10 fT VCE=10V, IC=200mA, f=2.0MHz 10 hfe VCE=10V, IC=200mA, f=1.0kHz 25 MAX 200 200 100 100 1.0 1.0 1.5 150 UNITS V V V A A mA W W °C °C/W °C/W UNITS μA μA μA μA mA V V V V MHz R3 (21-January 2013) CJD47 CJD50 SURFACE MOUNT SILICON NPN POWER TRANSISTORS DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Collector 3) Emitter 4) Collector MARKING: FULL PART NUMBER w w w. c.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CJD4410 |
JCET |
N-Channel MOSFET | |
2 | CJD4435 |
JCET |
P-Channel MOSFET | |
3 | CJD44H11 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON | |
4 | CJD45H11 |
Central Semiconductor Corp |
COMPLEMENTARY SILICON | |
5 | CJD01N60 |
ZPSEMI |
N-Channel Power MOSFET | |
6 | CJD01N60 |
JCET |
N-Channel Power MOSFET | |
7 | CJD01N65B |
ZPSEMI |
N-Channel Power MOSFET | |
8 | CJD01N80 |
ZPSEMI |
N-Channel Power MOSFET | |
9 | CJD02N60 |
JCET |
N-Channel MOSFET | |
10 | CJD02N60 |
ZPSEMI |
N-Channel Power MOSFET | |
11 | CJD02N65 |
JCET |
N-Channel MOSFET | |
12 | CJD02N65 |
ZPSEMI |
N-Channel Power MOSFET |