CFY67 - Infineon Technologies AG

CFY67 HiRel K-Band GaAs Super Low Noise HEMT

CFY67 HiRel K-Band GaAs Super Low Noise HEMT • • • • • • • HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain Space Qualified ESA/SCC Detail Spec. No.: 5613/004,.

Features

dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 3.5 4.5 - 3... + 0.5 60 2 + 10 150 - 65... + 150 200 230 Unit V V V mA mA dBm °C °C mW °C Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.: Rth JS ≤ 515 (tbc.) K/W 1) For VDS ≤ 2 V. F.