CFY66-08P - Infineon Technologies AG

CFY66-08P HiRel K-Band GaAs Super Low Noise HEMT

CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend to use our pseudo-morphic HEMT CFY67) For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain Spa.

Features

der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 3.5 4.5 - 3... + 0.5 60 2 + 10 150 - 65... + 150 200 230 Unit V V V mA mA dBm °C °C mW °C Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.: Rth JS ≤ 515 (tbc.) K/.