CED6861/CEU6861 P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -12A, RDS(ON) = 132mΩ @VGS = -10V. RDS(ON) = 195mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-25.
-60V, -12A, RDS(ON) = 132mΩ @VGS = -10V. RDS(ON) = 195mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD -60 ±20 -12 -48 31 0.25 Operating and Store Temp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU680J |
Mallory |
Disc Ceramic Capacitors | |
2 | CEU6030L |
CET |
N-Channel MOSFET | |
3 | CEU6031L |
CET |
N-Channel MOSFET | |
4 | CEU603AL |
Chino-Excel Technology |
N-Channel MOSFET | |
5 | CEU6042 |
CET |
N-Channel MOSFET | |
6 | CEU6056 |
CET |
N-Channel MOSFET | |
7 | CEU6056G |
CET |
N-Channel MOSFET | |
8 | CEU6060N |
CET |
N-Channel MOSFET | |
9 | CEU6060R |
CET |
N-Channel MOSFET | |
10 | CEU6086 |
CET |
N-Channel MOSFET | |
11 | CEU6086L |
CET |
N-Channel MOSFET | |
12 | CEU6186 |
CET |
N-Channel MOSFET |