CEU25N15L - Chino-Excel Technology

CEU25N15L N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 25A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED25N15L/CEU25N15L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-25.

Features

150V, 25A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED25N15L/CEU25N15L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 150 Units V V A A W W/ C C ±20 25 100 83.3 0.66 -55 to 150 Maximum Power Dissipation @ .