CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAX.
100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20 13.3 53 43 0.34 Operating and Store Temperature Range TJ,Tstg -55 to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEU16N10L |
Chino-Excel Technology |
N-Channel MOSFET | |
2 | CEU100D |
Mallory |
Disc Ceramic Capacitors | |
3 | CEU1012 |
CET |
N-Channel MOSFET | |
4 | CEU1012L |
CET |
N-Channel MOSFET | |
5 | CEU101J |
Mallory |
Disc Ceramic Capacitors | |
6 | CEU10P10 |
Chino-Excel Technology |
P-Channel MOSFET | |
7 | CEU110P03 |
CET |
P-Channel MOSFET | |
8 | CEU1185 |
CET |
N-Channel MOSFET | |
9 | CEU11P20 |
CET |
P-Channel MOSFET | |
10 | CEU121J |
Mallory |
Disc Ceramic Capacitors | |
11 | CEU12N10 |
CET |
N-Channel MOSFET | |
12 | CEU12N10L |
Chino-Excel Technology |
N-Channel MOSFET |