Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
CEU16N10 |
Click to view a larger image
| Part Number | CEU16N10 |
| Manufacturer | CET |
| Description | CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current h... |
| Features |
100V, 13.3A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package.
D
D
G S
CEU SERIES TO-252(D-PAK)
G DS
CED SERIES TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
100
±20
13.3 53 43 0.34
Operating and Store Temperature Range
TJ,Tstg
-55 to... |
| Document |
 CEU16N10 Data Sheet
PDF 254.03KB |
| Distributor | Stock | Price | Buy |
|---|
