CEU1012L - CET

CEU1012L N-Channel MOSFET

N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED1012L/CEU1012L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMU.

Features

120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED1012L/CEU1012L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Tc = 25 C unless otherwise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 120 Units V V A A W W/ C C ±20 10 40 50 0.3 -65 to 175 Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Op.