CES2316 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Curr.
30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 50mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Lead free product is acquired. Rugged and reliable. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±20 4.8 20 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CES2310 |
Chino-Excel Technology |
N-Channel MOSFET | |
2 | CES2312 |
Chino-Excel Technology |
N-Channel MOSFET | |
3 | CES2313 |
Chino-Excel Technology |
P-Channel MOSFET | |
4 | CES2313A |
Chino-Excel Technology |
P-Channel MOSFET | |
5 | CES2314 |
Chino-Excel Technology |
N-Channel MOSFET | |
6 | CES2317 |
CET |
P-Channel MOSFET | |
7 | CES2301 |
CET |
P-Channel MOSFET | |
8 | CES2302 |
Chino-Excel Technology |
N-Channel MOSFET | |
9 | CES2303 |
Chino-Excel Technology |
P-Channel MOSFET | |
10 | CES2304 |
CET |
N-Channel MOSFET | |
11 | CES2305 |
Chino-Excel Technology |
P-Channel MOSFET | |
12 | CES2306 |
CET |
N-Channel MOSFET |