CES2306 - CET

CES2306 N-Channel MOSFET

CES2306 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. High dense cell design for extremely low RDS(ON). Lead-free plating ; RoHS compliant. Rugged and reliable. SOT-23 package. DS G SOT-23 G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise.

Features

20V, 3.6A, RDS(ON) = 60mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V. High dense cell design for extremely low RDS(ON). Lead-free plating ; RoHS compliant. Rugged and reliable. SOT-23 package. DS G SOT-23 G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±8 Drain Current-Continuous Drain Current-Pulsed a ID 3.6 IDM 14 Maximum Power Dissipation PD 1.25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junc.