CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Cur.
20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±8 4.5 13.5 1.25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symb.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CES2310 |
Chino-Excel Technology |
N-Channel MOSFET | |
2 | CES2313 |
Chino-Excel Technology |
P-Channel MOSFET | |
3 | CES2313A |
Chino-Excel Technology |
P-Channel MOSFET | |
4 | CES2314 |
Chino-Excel Technology |
N-Channel MOSFET | |
5 | CES2316 |
Chino-Excel Technology |
N-Channel MOSFET | |
6 | CES2317 |
CET |
P-Channel MOSFET | |
7 | CES2301 |
CET |
P-Channel MOSFET | |
8 | CES2302 |
Chino-Excel Technology |
N-Channel MOSFET | |
9 | CES2303 |
Chino-Excel Technology |
P-Channel MOSFET | |
10 | CES2304 |
CET |
N-Channel MOSFET | |
11 | CES2305 |
Chino-Excel Technology |
P-Channel MOSFET | |
12 | CES2306 |
CET |
N-Channel MOSFET |