CEP60N06G - CET

CEP60N06G N-Channel MOSFET

CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RA.

Features

60V, 60A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 60 ±20 60 240 125 0.83 Operating and Store Temperature Range TJ,Tstg -65 to 175 Ther.