CEP6031LS2 - Chino-Excel Technology

CEP6031LS2 N-Channel Logic Level Enhancement Mode Field Effect Transistor

CEP6031LS2/CEB6031LS2 March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 60A , RDS(ON)=12m Ω @VGS=10V. RDS(ON)=17mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-.

Features

30V , 60A , RDS(ON)=12m Ω @VGS=10V. RDS(ON)=17mΩ @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. D G G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 S ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous @TJ=125 C -Pulsed ID IDM Drain-Source Diode Forward Current IS Maximum Power Dissipation @Tc=25 C Derate above 25 C PD 15 Operating and StorageTemperature Range TJ, TSTG Limit.