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CEP60N06G |
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| Part Number | CEP60N06G |
| Manufacturer | CET |
| Description | CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current han... |
| Features |
60V, 60A, RDS(ON) = 16mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
60
±20
60 240 125 0.83
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Ther... |
| Document |
 CEP60N06G Data Sheet
PDF 395.95KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | CEP60N10 |
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| 2 | CEP60N10V |
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| 5 | CEP6030L |
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