CEP18N5 - Inchange Semiconductor

CEP18N5 N-Channel MOSFET Transistor

·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 219 W TJ Max. Operating Junction Temp.

Features

·Drain Current : ID= 18A@ TC=25℃
·Drain Source Voltage : VDSS= 500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.29Ω(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 219 W TJ Max. O.