CEP1195/CEB1195 CEF1195 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1195 CEB1195 CEF1195 VDSS 900V RDS(ON) 2.75Ω ID 5A @VGS 10V 900V 2.75Ω 5A 10V 900V 2.75Ω 5A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES T.
Type CEP1195 CEB1195 CEF1195 VDSS 900V RDS(ON) 2.75Ω ID 5A @VGS 10V 900V 2.75Ω 5A 10V 900V 2.75Ω 5A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energyh Single Pulsed Avalanche Current h Operatin.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP110P03 |
CET |
P-Channel MOSFET | |
2 | CEP1110 |
Sumida |
Pulse transformer | |
3 | CEP1112 |
Sumida |
Pulse transformer | |
4 | CEP1165 |
CET |
N-Channel MOSFET | |
5 | CEP1175 |
CET |
N-Channel MOSFET | |
6 | CEP1185 |
CET |
N-Channel MOSFET | |
7 | CEP1186 |
CET |
N-Channel MOSFET | |
8 | CEP1012 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
9 | CEP1012L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
10 | CEP10N4 |
CET |
N-Channel MOSFET | |
11 | CEP10N6 |
CET |
N-Channel MOSFET | |
12 | CEP125 |
Sumida |
Power Inductors |