CEP12N65/CEB12N65 CEF12N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650V 650V RDS(ON) 0.73Ω 0.73Ω 0.73Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D .
Type CEP12N65 CEB12N65 CEF12N65 VDSS 650V 650V 650V RDS(ON) 0.73Ω 0.73Ω 0.73Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM e 650 ±30 12 48 12 d 48d Maximum Power D.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP12N6 |
CET |
N-Channel MOSFET | |
2 | CEP12N5 |
CET |
N-Channel MOSFET | |
3 | CEP125 |
Sumida |
Power Inductors | |
4 | CEP12P10 |
CET |
P-Channel MOSFET | |
5 | CEP1012 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
6 | CEP1012L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
7 | CEP10N4 |
CET |
N-Channel MOSFET | |
8 | CEP10N6 |
CET |
N-Channel MOSFET | |
9 | CEP110P03 |
CET |
P-Channel MOSFET | |
10 | CEP1110 |
Sumida |
Pulse transformer | |
11 | CEP1112 |
Sumida |
Pulse transformer | |
12 | CEP1165 |
CET |
N-Channel MOSFET |