• Ferrite core construction. × × × ×• Magnetically shielded. • L W H: 12.9 12.9 5.6 mm Max. • Product weight: 2.7g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. Dimension - [mm] 12.5±0.4 0.4 21.5± MAX.5.6 ℃ ℃Environmental Data • Operating temperature range: -40 ~+125 (including coil’s self temperature rise) ℃~ ℃• Storage temperature range: -.
HIN 1 μ ±1.5 H 20% μ ±2.5 H 20% μ ±4.0 H 20% μ ±6.0 H 20% μ ±8.2 H 20% μ ±10.0 H 20% ΩD.C.R. (m ) ℃[MAX.] (Typ.) (at 20 ) 2.5(2.1) 3.4(2.8) 5.4(4.5) 8.0(6.6) 11.4(9.5) 13.5(11.2) ※SATURATION CURRENT(A) 2 ℃ ℃(at 20 ) (at100 ) 14.0 11.8 10.0 8.8 8.3 7.2 6.7 5.8 5.8 5.1 5.0 4.6 TEMPERATURE ※RISE CURRENT (A) 3 16.5 15.5 12.5 9.9 8.2 7.6 Electrical Characteristics - 2 PART NO. CEP125NP-1R0MC-H CEP125NP-1R8MC-H CEP125NP-2R8MC-H CEP125NP-4R0MC-H CEP125NP-5R6MC-H CEP125NP-7R2MC-H STAMP 1R0MH 1R8MH 2R8MH 4R0MH 5R6MH 7R2MH [ ]※INDUCTANCE WITHIN 1 μ ±1.0 H 20% μ ±1.8 H 20% μ ±2.8 H 20% μ ±4.0 H .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEP12N5 |
CET |
N-Channel MOSFET | |
2 | CEP12N6 |
CET |
N-Channel MOSFET | |
3 | CEP12N65 |
CET |
N-Channel Enhancement Mode Field Effect Transistor | |
4 | CEP12P10 |
CET |
P-Channel MOSFET | |
5 | CEP1012 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
6 | CEP1012L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor | |
7 | CEP10N4 |
CET |
N-Channel MOSFET | |
8 | CEP10N6 |
CET |
N-Channel MOSFET | |
9 | CEP110P03 |
CET |
P-Channel MOSFET | |
10 | CEP1110 |
Sumida |
Pulse transformer | |
11 | CEP1112 |
Sumida |
Pulse transformer | |
12 | CEP1165 |
CET |
N-Channel MOSFET |