CEP03N8 - CET

CEP03N8 N-Channel MOSFET

CEP03N8/CEB03N8 CEF03N8 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP03N8 CEB03N8 CEF03N8 VDSS 800V 800V 800V RDS(ON) 4.8Ω 4.8Ω 4.8Ω ID @VGS 3A 10V 3A 10V 3A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-.

Features

Type CEP03N8 CEB03N8 CEF03N8 VDSS 800V 800V 800V RDS(ON) 4.8Ω 4.8Ω 4.8Ω ID @VGS 3A 10V 3A 10V 3A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Tc = 25 C unless otherwise noted Symbol Limit TO-220/26.