CEP02N9 - CET

CEP02N9 N-Channel MOSFET

CEP02N9/CEB02N9 CEF02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP02N9 CEB02N9 CEF02N9 VDSS 900V 900V 900V RDS(ON) 6.8Ω 6.8Ω 6.8Ω ID 2.6A 2.6A 2.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB .

Features

Type CEP02N9 CEB02N9 CEF02N9 VDSS 900V 900V 900V RDS(ON) 6.8Ω 6.8Ω 6.8Ω ID 2.6A 2.6A 2.6A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage VDS 900 VGS ±30 Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @.