CEM3307 - CET

CEM3307 P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 CEM3307 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAX.

Features

-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 8 CEM3307 D1 7 D2 6 D2 5 SO-8 1 1 S1 2 G1 3 S2 4 G2 ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -6.2 -25 2.0 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range.