P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -7.0A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 CEM3301 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RAT.
-30V, -7.0A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D 8 CEM3301 D 7 D 6 D 5 SO-8 1 1 S 2 S 3 S 4 G ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -7.0 -25 2.5 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Therma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CEM3307 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
2 | CEM3310 |
ETC |
Voltage Controlled Envelope Generator | |
3 | CEM3317 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
4 | CEM3320 |
ETC |
Voltage Controlled Filter | |
5 | CEM3328 |
ETC |
FOUR POLE LOW PASS VCF | |
6 | CEM3328 |
ETC |
FOUR POLE LOW PASS VCF | |
7 | CEM3330 |
ETC |
(CEM3330 / CEM3335) DUAL VOLTAGE CONTROLLED AMPLIFIER | |
8 | CEM3335 |
ETC |
(CEM3330 / CEM3335) DUAL VOLTAGE CONTROLLED AMPLIFIER | |
9 | CEM3340 |
ETC |
VOLTAGE CONTROLLED OSCILLATOR | |
10 | CEM3340 |
CES |
(CEM3340 / CEM3345) Voltage Controlled Oscillator | |
11 | CEM3345 |
ETC |
VOLTAGE CONTROLLED OSCILLATOR | |
12 | CEM3345 |
CES |
(CEM3340 / CEM3345) Voltage Controlled Oscillator |