CEM3307 |
Part Number | CEM3307 |
Manufacturer | CET |
Description | P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and... |
Features |
-30V, -6.2A, RDS(ON) = 33mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8
CEM3307
D1 7
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C
±20
-6.2 -25 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range... |
Document |
CEM3307 Data Sheet
PDF 439.34KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CEM3301 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
2 | CEM3310 |
ETC |
Voltage Controlled Envelope Generator | |
3 | CEM3317 |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
4 | CEM3320 |
ETC |
Voltage Controlled Filter | |
5 | CEM3328 |
ETC |
FOUR POLE LOW PASS VCF |