CDMSJ22010-650 - Central Semiconductor

CDMSJ22010-650 N-CHANNEL SUPER JUNCTION MOSFET

The CENTRAL SEMICONDUCTOR CDMSJ22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), and power chargers. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge. MARKING: CDMSJ 10-650 FEATURES: • High voltage .

Features

• High voltage capability (VDS=650V)
• Low gate charge (Qgs=4nC)
• Low rDS(ON) (0.39Ω) MAXIMUM RATINGS: (TC=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current (TC=100°C) Pulsed Drain Current Diode Forward Current Power Dissipation Power Dissipation (TC=100°C) Operating and Storage Junction Temperature SYMBOL UNITS VDS 650 V VGS 30 V ID 10 A ID 6.2 A IDM 22 A IS 10 A PD 29.5 W PD 12 W TJ, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS: (TJ=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX UNITS B.