CDM22010-650 - Central Semiconductor

CDM22010-650 SILICON N-CHANNEL POWER MOSFET

The CENTRAL SEMICONDUCTOR CDM22010-650 is a high current, 650 Volt N-Channel power MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This MOSFET combines high voltage capability with low rDS(ON), low threshold voltage and low gate charge. TO-220 CASE MARKING CODE: CDM10-650 .

Features

• High voltage capability (VDS=650V)
• Low gate charge (Qgs=8.0nC)
• Low rDS(ON) (0.88Ω) MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS 30 V Continuous Drain Current (Steady State) ID 10 A Maximum Pulsed Drain Current, tp=10µs IDM 40 A Continuous Source Current (Body Diode) IS 10 A Maximum Pulsed Source Current (Body Diode) ISM 40 A Single Pulse Avalanche Energy (Note 1) EAS 608 mJ Power Dissipation PD 2.0 W Power Dissipation (TC=25°C) PD 156 W Operating and Storage Junction Temper.