The CENTRAL SEMICONDUCTOR CDM22011-600LRFP is a 600 volt N-Channel MOSFET designed for high voltage, fast switching applications such as Power Factor Correction (PFC), lighting and power inverters. This UltraMOSTM MOSFET combines high voltage capability with ultra low rDS(ON), low threshold voltage, and low gate charge for optimal efficiency. MARKING CODE: .
• High voltage capability (VDS=600V)
• Low gate charge (Qgs=4.45nC TYP)
• Ultra low rDS(ON) (0.3Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
Thermal Resistance
JA
Note 1: L=30mH, IAS=4.0A, VDD=.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CDM22010-650 |
Central Semiconductor |
SILICON N-CHANNEL POWER MOSFET | |
2 | CDM2206-800LR |
Central Semiconductor |
N-CHANNEL LR POWER MOSFET | |
3 | CDM-16214 |
Pacific Display Devices |
LCD | |
4 | CDM-16235 |
ETC |
PACIFIC DISPLAY | |
5 | CDM-20008 |
CUI |
SPEAKER | |
6 | CDM-62256C |
Harris Semiconductor |
High Reliability CMOS 32768 x 8-Bit LSI Static RAM | |
7 | CDM-62256C3 |
Harris Semiconductor |
High Reliability CMOS 32768 x 8-Bit LSI Static RAM | |
8 | CDM3-800 |
Central Semiconductor |
N-CHANNEL MOSFET | |
9 | CDM4-600LR |
Central Semiconductor |
SURFACE MOUNT SILICON N-CHANNEL LR POWER MOSFET | |
10 | CDM4-650 |
Central Semiconductor |
SILICON N-CHANNEL MEDIUM POWER MOSFET | |
11 | CDM4161 |
Figaro |
Pre-calibrated module | |
12 | CDM53128 |
GE |
CMOS 16384-Word by 8-Bit LSI Static ROM |