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Power Transistors 2SC5935 Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be instal.
φ 3.2±0.1
15.0±0.5
• Satisfactory linearity of forward current transfer ratio hFE
• Dielectric breakdown voltage of the package: 5 kV
• Full-pack package which can be installed to the heat sink with one
screw.
1.4±0.2 1.6±0.2
2.6±0.1
/
■ Absolute Maximum Ratings TC = 25°C
0.8±0.1
0.55±0.15
e Parameter
Symbol Rating
Unit
13.7±0.2 4.2±0.2
Solder Dip
c type) Collector-base voltage (Emitter open) VCBO
200
V
n d ge. ed Collector-emitter voltage (Base open) VCEO
180
V
sta tinu Emitter-base voltage (Collector open) VEBO
6
V
a e cycle iscon Collector current
IC
2
A
life d,.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5931 |
Panasonic Semiconductor |
2SC5931 |
|
| 2 | C5934 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 3 | C5936 |
ETC |
Transistor |
|
| 4 | C5902 |
Panasonic Semiconductor |
2SC5902 |
|
| 5 | C5904 |
Panasonic Semiconductor |
2SC5904 |
|
| 6 | C5905 |
Panasonic Semiconductor |
2SC5905 |
|
| 7 | C5906 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | C5906 |
PHENITEC SEMICONDUCTOR |
Silicon NPN transistor |
|
| 9 | C5909 |
Panasonic |
2SC5909 |
|
| 10 | C5914 |
Panasonic |
2SC5914 |
|
| 11 | C5915 |
Sanyo Semiconductor Corporation |
2SC5915 |
|
| 12 | C5929 |
ETC |
NPN Transistor |
|