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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) C.
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C5906 - PHENITEC SEMICONDUCTOR
Silicon NPN transistor epitaxial type C5906 C5906 [ Applications ] High voltage, High current [ Feature ] High voltag.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | C5902 |
Panasonic Semiconductor |
2SC5902 |
|
| 2 | C5904 |
Panasonic Semiconductor |
2SC5904 |
|
| 3 | C5905 |
Panasonic Semiconductor |
2SC5905 |
|
| 4 | C5909 |
Panasonic |
2SC5909 |
|
| 5 | C5914 |
Panasonic |
2SC5914 |
|
| 6 | C5915 |
Sanyo Semiconductor Corporation |
2SC5915 |
|
| 7 | C5929 |
ETC |
NPN Transistor |
|
| 8 | C5931 |
Panasonic Semiconductor |
2SC5931 |
|
| 9 | C5934 |
Sanyo Semicon Device |
PNP / NPN Epitaxial Planar Silicon Transistors |
|
| 10 | C5935 |
Panasonic |
Silicon NPN Transistor |
|
| 11 | C5936 |
ETC |
Transistor |
|
| 12 | C5948 |
Toshiba |
Silicon NPN Transistor |
|